| PART |
Description |
Maker |
| LY62L102616ALL-55SL |
16M Bits ( 2Mx8 / 1Mx16 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
BSI
ETC[ETC]
Brilliance Semiconductor
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AM49BDS640AH |
Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
|
AMD
|
| BS616LV1626TI BS616LV1622TC-55 BS616LV1622TC-70 BS |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
LM4922 Boomer ® Audio Power Amplifier Series Ground-Referenced, Ultra Low Noise, Fixed Gain, 80mW Stereo Headphone Amplifier; Package: MICRO SMD; No of Pins: 14
LM4921 Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20 非常低功电压CMOS SRAM00万16M × 8位开
LM4921? Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20
|
Brilliance Semiconducto...
http://
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| M49000004C M49000004B M49000004D M49000004E AM49BD |
Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write SPECIALTY MEMORY CIRCUIT, PBGA89
|
Spansion Inc.
Spansion, Inc.
|
| LH5316P00B LH5316P00BN |
CMOS 16M(2M x 8, 1M x 16) MROM
CMOS 16M (2M x 8/1M x 16) MROM
|
Sharp Electrionic Components
Sharp Corporation
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
